Tugay, E. Et Al. 2014. Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime. JOURNAL OF LUMINESCENCE , vol.155 , 170-179.

Tugay, E., Ilday, S., TURAN, R., & FINSTAD, T. G., (2014). Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime. JOURNAL OF LUMINESCENCE , vol.155, 170-179.

Tugay, EVRİN Et Al. "Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime," JOURNAL OF LUMINESCENCE , vol.155, 170-179, 2014

Tugay, EVRİN Et Al. "Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime." JOURNAL OF LUMINESCENCE , vol.155, pp.170-179, 2014

Tugay, E. Et Al. (2014) . "Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime." JOURNAL OF LUMINESCENCE , vol.155, pp.170-179.

@article{article, author={EVRİN TUĞAY Et Al. }, title={Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime}, journal={JOURNAL OF LUMINESCENCE}, year=2014, pages={170-179} }