OĞUZ, Y. And GÜL, F. 2018. A Validated Mathematical Model forSemiconductor Memristor Devices. 2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018) , (Ardahan, Turkey), 253-258.

OĞUZ, Y., & GÜL, F., (2018). A Validated Mathematical Model forSemiconductor Memristor Devices . 2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018) (pp.253-258). Ardahan, Turkey

OĞUZ, YASİN, And FATİH GÜL. "A Validated Mathematical Model forSemiconductor Memristor Devices," 2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018), Ardahan, Turkey, 2018

OĞUZ, YASİN And GÜL, FATİH. "A Validated Mathematical Model forSemiconductor Memristor Devices." 2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018) , Ardahan, Turkey, pp.253-258, 2018

OĞUZ, Y. And GÜL, F. (2018) . "A Validated Mathematical Model forSemiconductor Memristor Devices." 2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018) , Ardahan, Turkey, pp.253-258.

@conferencepaper{conferencepaper, author={YASİN OĞUZ And author={FATİH GÜL}, title={A Validated Mathematical Model forSemiconductor Memristor Devices}, congress name={2nd International Congress on Semiconductor Materials and Devices” (ICSMD-2018)}, city={Ardahan}, country={Turkey}, year={2018}, pages={253-258} }