A. Karabulut Et Al. , "A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations," Current Applied Physics , vol.20, no.1, pp.58-64, 2020
Karabulut, A. Et Al. 2020. A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations. Current Applied Physics , vol.20, no.1 , 58-64.
Karabulut, A., Sarilmaz, A., Ozel, F., Orak, İ., & Şahinkaya, M. A., (2020). A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations. Current Applied Physics , vol.20, no.1, 58-64.
Karabulut, Abdulkerim Et Al. "A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations," Current Applied Physics , vol.20, no.1, 58-64, 2020
Karabulut, Abdulkerim Et Al. "A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations." Current Applied Physics , vol.20, no.1, pp.58-64, 2020
Karabulut, A. Et Al. (2020) . "A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations." Current Applied Physics , vol.20, no.1, pp.58-64.
@article{article, author={Abdulkerim Karabulut Et Al. }, title={A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations}, journal={Current Applied Physics}, year=2020, pages={58-64} }