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Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition
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M. Tomakin Et Al. , "Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.120-127, 2011

Tomakin, M. Et Al. 2011. Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2 , 120-127.

Tomakin, M., Altunbas, M., Bacaksız, E., & Polat, İ., (2011). Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, 120-127.

Tomakin, MURAT Et Al. "Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, 120-127, 2011

Tomakin, MURAT Et Al. "Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.120-127, 2011

Tomakin, M. Et Al. (2011) . "Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.120-127.

@article{article, author={MURAT TOMAKİN Et Al. }, title={Preparation and characterization of new window material CdS thin films at low substrate temperature (< 300 K) with vacuum deposition}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2011, pages={120-127} }