GÜL, F. 2018. A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices. 2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018 , (Ardahan, Turkey), 6976-6978.

GÜL, F., (2018). A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices . 2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018 (pp.6976-6978). Ardahan, Turkey

GÜL, FATİH. "A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices," 2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018, Ardahan, Turkey, 2018

GÜL, FATİH. "A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices." 2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018 , Ardahan, Turkey, pp.6976-6978, 2018

GÜL, F. (2018) . "A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices." 2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018 , Ardahan, Turkey, pp.6976-6978.

@conferencepaper{conferencepaper, author={FATİH GÜL}, title={A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices}, congress name={2nd International Congress on Semiconductor Materials and Devices, ICSMD 2018}, city={Ardahan}, country={Turkey}, year={2018}, pages={6976-6978} }