Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol-gel spin technique


Keskenler E. F. , Tomakin M., Dogan S., Turgut G., Aydın S., Duman S., ...More

JOURNAL OF ALLOYS AND COMPOUNDS, vol.550, pp.129-132, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 550
  • Publication Date: 2013
  • Doi Number: 10.1016/j.jallcom.2012.09.131
  • Journal Name: JOURNAL OF ALLOYS AND COMPOUNDS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.129-132
  • Keywords: Ag/n-ZnO/p-Si/Al heterojunction, Sol-gel, Diode, Ideality factor, CURRENT-VOLTAGE CHARACTERISTICS, OPTICAL-PROPERTIES, SCHOTTKY DIODE, THIN-FILMS, ELECTRICAL CHARACTERIZATION, FABRICATION, PARAMETERS, EXTRACTION, CONTACTS, AU
  • Recep Tayyip Erdoğan University Affiliated: Yes

Abstract

Polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol-gel method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (002) preferred direction. Scanning electron microscope image of ZnO showed that the obtained ZnO thin films had more porous character. High purity vacuum evaporated silver (Ag) and aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Ag/n-ZnO/p-Si/Al diode were investigated by using current-voltage measurements. Ag/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found to be 2.03 and 0.71 eV by applying a thermionic emission theory, respectively. The values of series resistance from dV/d (lnI) versus I and H(I) versus I curves were found to be 42.1 and 198.3 Omega, respectively. (C) 2012 Elsevier B.V. All rights reserved.