Effects of Acceptor Dopants (Li, N, B) on ZnO Thin Film Prepared by Spray Pyrolysis


Bayazıt T., Olgar M. A., Güner S. B., Tomakın M., Bacaksız E.

6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2019), Niğde, Türkiye, 16 - 18 Ekim 2019, (Özet Bildiri)

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Niğde
  • Basıldığı Ülke: Türkiye
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Evet

Özet

In this study, undoped and Li, N and B doped ZnO thin films were prepared with

ultrasonic spray pyrolysis method. During the growth, the substrates were rotated with a speed

of 3.5 rpm at a temperature of 400 °C and in atmospheric pressure. X-ray diffraction studies

showed that all samples had hexagonal crystal structure and the preferred orientation changed

from the (101) plane to the (002) plane for Li and B doped samples. Undoped samples had a

flat leafy grain structure. Smaller grains similar to pebbles were formed in B doped ZnO thin

films. Zn/O composition ratio (at.%) was found around 1 for undoped, Li and N doped smples.

However, Zn/O ratio for B doped ZnO was 0.71, that demonstrate O-rich structure. According

to optical results, B doped samples had the high transmittance (> 90%) and the band gap values

(3.28 eV). Also, p-type conductivity was observed only B doped sample. Room temperature

photoluminescence measurements showed that undoped and B doped samples exhibited sharp

and predominant UV luminescence at approximately 380 nm. Undoped and Li doped samples

had broad defect emission peak between 400 and 675 nm. However, one defect peak around

600 nm for B doped sample was observed. According to RTPL results it was determined that

B doping in ZnO decreased n-type defect concentration and so increased p-type conductivity.