Akademik Veri Yönetim Sistemi
6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2019), Niğde, Türkiye, 16 - 18 Ekim 2019, (Özet Bildiri)
In this study, undoped and Li, N and B doped ZnO thin films were prepared with
ultrasonic spray pyrolysis method. During the growth, the substrates were rotated with a speed
of 3.5 rpm at a temperature of 400 °C and in atmospheric pressure. X-ray diffraction studies
showed that all samples had hexagonal crystal structure and the preferred orientation changed
from the (101) plane to the (002) plane for Li and B doped samples. Undoped samples had a
flat leafy grain structure. Smaller grains similar to pebbles were formed in B doped ZnO thin
films. Zn/O composition ratio (at.%) was found around 1 for undoped, Li and N doped smples.
However, Zn/O ratio for B doped ZnO was 0.71, that demonstrate O-rich structure. According
to optical results, B doped samples had the high transmittance (> 90%) and the band gap values
(3.28 eV). Also, p-type conductivity was observed only B doped sample. Room temperature
photoluminescence measurements showed that undoped and B doped samples exhibited sharp
and predominant UV luminescence at approximately 380 nm. Undoped and Li doped samples
had broad defect emission peak between 400 and 675 nm. However, one defect peak around
600 nm for B doped sample was observed. According to RTPL results it was determined that
B doping in ZnO decreased n-type defect concentration and so increased p-type conductivity.