Akademik Veri Yönetim Sistemi
SENSORS AND ACTUATORS A-PHYSICAL, cilt.394, 2025 (SCI-Expanded, Scopus)
In this study, the impact of thin Sb-layer in the device on CdTe photodetector parameters were examined. CdTe films were deposited by the close spaced sublimation (CSS) method, and then Sb-thin films were grown onto CdTe coated substrates by DC sputtering. In the structural analyses, it was observed that both as-dep and annealed CdTe exhibited the formation of double phases (Cd-rich and Cd-poor CdTe). However, Sb coating on CdTe led to the formation of Cd-rich and stoichiometric cubic CdTe phases. Surface images revealed that all samples exhibited a densely-packed grain morphology, with average grain sizes of 7.74 mu m, 8.15 mu m, and 7.15 mu m for as-dep. CdTe, annealed CdTe, and annealed CdTe/Sb, respectively. It was calculated that the preparation steps of the samples had no considerable effect on the bandgap, as all samples exhibited values within the range of 1.45-1.48 eV. Meanwhile, PL features in the range of 817-820 nm were observed for all samples, attributed to acceptor-bound exciton transitions in the as-dep CdTe, and to donor-bound exciton transitions in the annealed CdTe and CdTe/Sb films. All photodetectors exhibited photoconductive behavior; however, the best performance was achieved by annealing CdTe under Cd-overpressure (R=1.7 mA/W, D*=3.4 x10' Jones for blue light, and R=2.5 mA/W, D*=5 x10' Jones for red light). Furthermore, the annealed CdTe photodetector maintained a significant level of performance even after six months without encapsulation. In contrast, Sb coating on CdTe led to a slight degradation in device performance, attributed to its adverse effects on defect levels and grain structure.