Earth-abundant quaternary semiconductor Cu2MSnS4 (M = Fe, Co, Ni and Mn) nanofibers: Fabrication, characterization and band gap arrangement

Ozel F.

Journal of Alloys and Compounds, cilt.657, ss.157-162, 2016 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 657
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.jallcom.2015.10.087
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.157-162
  • Anahtar Kelimeler: Band gap arrangement, Cu2MSnS4, CuMSnS nanofibers, Electrospinning
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Hayır

Özet

Quaternary-structured semiconductors Cu2MSnS4 (M = Fe, Co, Ni and Mn) are important materials due to indium free content and consisting of earth abundant elements, which can significantly decrease the cost of devices. Here, we have successfully produced Cu2FeSnS4, Cu2CoSnS4, Cu2NiSnS4 and Cu2MnSnS4 nanofibers by a simple electrospinning technique. Polyacrilonitrile (PAN) was used as a templating polymer to decrease imperfections in crystal lattice. Outstanding structures with only a few defects and diameter range from 150 to 250 nm were produced. The resulting CuMSnS fibers were characterized by XRD, HR-TEM, EDS, SEM - Mapping, UV-Vis and CV to investigate the crystal structure, composition, morphology, and band gap. This work demonstrates that Cu2MSnS4 nanofibers have p-type conductivity and are promising absorber materials for energy-conversion applications.