Akademik Veri Yönetim Sistemi
4th INTERNATIONAL ENERGY CONGRESS, Sivas, Türkiye, 07 Ekim 2025, cilt.1, ss.156-165, (Tam Metin Bildiri)
As is known, semiconductors belonging to the A2B6 semiconductor group (CdTe, CdS, CdSe, ZnSe, ZnS, etc.) contain elements with high vapor pressures and develop numerous structural defects during their production. This restricts the use of these materials in device fabrication. In this study, CdTe films used as absorber layers in solar cells (CdS/CdTe) were grown for the first time on the surface of cooled glass/Au+Cu layers at wide substrate temperatures (300 K-100 K) with 50 K intervals. It was observed that the CdTe films produced at all substrate temperatures grew in the direction of (111) planes in a cubic structure. However, as the substrate temperature approached 100 K, the X-ray diffraction patterns (XRD) spectra of the CdTe films exhibited broad 2Ɵ angle spectra similar to a Gaussian distribution. FESEM images showed that the CdTe film produced at a substrate temperature of 200 K consisted of grains of equal size (30-40 nm), and this occurred via the soliton growth mechanism expected from the cold substrate method. In the second stage of the study, CdTe (2.5-3 µm) was evaporated onto the surface of the Glass/Au+Cu binary structures at a substrate temperature of 200 K. This ternary structure was heated at a substrate temperature of 230 °C, and the CdS optical window layer (100-150 nm) was evaporated. The photovoltaic parameters of the resulting In/n CdS/p-CdTe/Cu+Au/Cam solar cell were investigated in dark and bright conditions (100 mW/cm2), and the obtained photovoltaic parameters were compared with solar cells produced using standard methods. It was understood that the solar cell obtained with the new application exhibited higher photovoltaic parameters (ISC = 11.53 mA, VOC = 0.43 V, FF = 0.56 and Ƞ (%) = 5.60) due to the fact that the CdTe photoactive layer with high vapor pressure was produced by the cold substrate method and thus has a high stoichiometric crystal structure. The photovoltaic parameters of the CdS/CdTe solar cells of the CdS layers produced at 200 K substrate temperatures were calculated as, respectively.