Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Sudradjat F. F., Zhang W., Woodward J., Durmaz H., Moustakas T. D., Paiella R.

APPLIED PHYSICS LETTERS, vol.100, no.24, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 100 Issue: 24
  • Publication Date: 2012
  • Doi Number: 10.1063/1.4729470
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Recep Tayyip Erdoğan University Affiliated: No

Abstract

Far-infrared photoconductive detectors based on intersubband transitions in III-nitride semiconductor quantum wells are demonstrated. The device active material is based on a double-step quantum-well design, where two different (Al)GaN compositions are used both in the wells and in the barriers. With this approach, one can create a virtually flat multiple-quantum-well potential energy profile, where the deleterious effects of the intrinsic spontaneous and piezoelectric fields of nitride heterostructures are almost completely eliminated. Photocurrent spectra centered at a wavelength of 23 mu m (13 THz frequency) are resolved up to 50 K, with responsivity of approximately 7 mA/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729470]