Modulation Properties of Cu2Sn(SxSe1-x)3 Thin Films Through Various Reaction Temperatures Using Rapid Thermal Processing

Bayazıt T., Tomakın M., Olgar M. A., Küçükömeroğlu T., Bacaksız E.

6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2019), Niğde, Türkiye, 16 - 18 Ekim 2019, (Özet Bildiri)

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Niğde
  • Basıldığı Ülke: Türkiye
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Evet

Özet

Cu2ZnSnS4 (CZTS) is a quaternary semiconductor material and fabrication of pure CZTS

phase is big issue due to formation of undesired secondary phases such as ZnS, SnS, CuS etc.

Therefore, ternary compound Cu2SnS3 (CTS) has been emerged as a new and alterative material

to CZTS since it shares the similar optical and electrical properties and less kind of raw

materials that provides less probability formation of secondary phases. In this study,

Cu2Sn(SxSe1-x)3 thin films were prepared at the first time by a two-stage process includes dipcoating

of Cu–Sn precursors as distinct from vacuum-based fabrication methods followed by

sulfurization/selenization process of prepared precursors via rapid thermal processing (RTP) at

525-550-575 °C.

EDX results of the prepared films showed Cu-poor composition. It is well known that Cupoor

composition is preferable for highly efficient CTS-based solar cells [1] since Cu vacancies

may enhance the p-type conductivity of the film which is desirable for photovoltaic applications

[2, 3]. X-ray diffraction and Raman spectra of the samples showed that all thin films had a

monoclinic structure as a dominant phase and additionally some secondary phases such as

tetragonal Cu2SnS3 and orthorhombic Cu3SnS4. Diffraction angle values of the thin films

decreased with increasing Se amount, suggesting that the interplanar spacing (d) is increased.

Also, SEM image of all thin films displayed compact and dense surface morphology. In

addition, grain size increased with increasing Se ratio.

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