Akademik Veri Yönetim Sistemi
APPLIED RADIATION AND ISOTOPES, cilt.227, 2026 (SCI-Expanded, Scopus)
Effective shielding against gamma radiation is essential in sensitive domains such as microelectronics, aerospace technology, and radiation detection systems. In this regard, thin-film technologies are considered to provide effective and appropriate protection in microscale systems to alleviate the detrimental effects of gamma radiation. This study investigates the fabrication of HfO2 thin films at five distinct molarities via a spin-coating technique, a modification of the sol-gel method. The radiation shielding parameters, such as linear attenuation coefficient (LAC), mass attenuation coefficient (MAC), tenth value layer (TVL), mean free path (MFP), and half value layer (HVL), were thoroughly analysed. This study investigated the effectiveness of different materials in shielding photons emitted from Yttrium K alpha (14.9 keV), Silver K alpha (22.1 keV), Barium K alpha (32.1 keV), Europium K alpha (41.5 keV), and Americium-241 K alpha (59.5 keV) sources. The radiation shielding parameters for the Americium241 radioactive annular gamma source, were meticulously examined using the secondary induced radiation attenuation method, which facilitated the extraction of multiple energies from a singular source while preserving the identical geometry. This experiment employed a photon-counting detection system characterized by a resolution of 150 eV at an energy level of 5.95 keV. The attenuation results of thin hafnium dioxide films with different thickness and molarity ratios were examined in this study demonstrate their potential as effective attenuation materials at suitable thicknesses. The results indicated that increased molarity significantly affected the thickness of thin films, and the attenuation properties improved with higher molarity.