Akademik Veri Yönetim Sistemi
ACS OMEGA, cilt.00, sa.00, ss.1-11, 2025 (SCI-Expanded)
This study investigates the CdTe thin films prepared usingtwo distinct methods: classical and cryogenic techniques of thermalevaporation within a substrate temperature range of 100−573 K. X-raydiffraction (XRD) analysis revealed cubic (111) crystal growth across allsubstrate temperatures, transitioning to an amorphous structure as thetemperature approached 100 K. The CdTe thin film produced at 200 Kstood out with superior structural properties, characterized by the lowestsurface roughness (Ra = 1.1 nm) and a highly uniform grain structure,attributed to the soliton growth mechanism. The grain sizes of the thinfilms decreased from 53.6 to 14.8 nm with a decreasing substratetemperature, correlating with an increase in resistivity (1.88−3.87 × 103 Ω·cm) and band gap energy (1.48−1.65 eV). The CdTe thin films producedat the substrate temperatures of 200 and 473 K were relatively morestoichiometric. Photoluminescence (PL) measurements highlighted the enhanced luminescence intensity near the band-edge at 200K, further confirming the optimal stoichiometry and structural quality of CdTe films produced in this regime. The findings highlightthat the cryogenic technique could provide a significant advantage for applications such as quantum dots or nano-optoelectronics,where nanoparticle size and distribution must be precisely controlled.