The electronic structure of Ag1-xSn1+xSe2 (x=0.0, 0.1, 0.2, 0.25 and 1.0)

Wakita T., PARIS E., Kobayashi K., Terashima K., Hacisalihoglu M. Y., Ueno T., ...Daha Fazla

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, cilt.19, sa.39, ss.26672-26678, 2017 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 19 Sayı: 39
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1039/c7cp05369j
  • Dergi Adı: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.26672-26678
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Evet

Özet

We have studied the valence electronic structure of Ag1-xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25) and SnSe (x = 1.0) by a combined analysis of X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS) measurements. Both XAS and XPS reveal an increase in electron carriers in the system with x (i.e. excess Sn concentration) for 0 <= x <= 0.25. The core-level spectra (Sn 3d, Ag 3d and Se 3d) show that the charge state of Ag is almost 1+, while that of of Sn splits into Sn2+ and Sn4+ (providing clear evidence of valence skipping for the first time) with a concomitant splitting of Se into Se2- and Se2-delta states. The x dependence of the split components in Sn and Se together with the Se-K edge XAS reveals that the Se valence state may have an essential role in the transport properties of this system.