Akademik Veri Yönetim Sistemi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.1, sa.1, ss.1-24, 2026 (SCI-Expanded, Scopus)
In this study, microplastic (MP) particles were used in the production of p–n junction devices, marking an important step in the recycling of these particles, which cause environmental pollution. The characteristic features of microplastics formed during the washing of textile materials in the first stage of the device formation were examined. Energy Dispersive Spectrum (EDS) analyses showed that the examined microplastic samples contained a rich Boron (B) content in their structures, originating from cleaning materials. X-ray diffraction (XRD) analysis revealed a mixed-phase structure with both crystalline and amorphous components, supporting the presence of boron-based compounds such as B₂O₃, H₃BO₃, and B₄C within the microplastic matrix. Optical absorption measurements demonstrated three major absorption bands, which support the presence of boron-based phases. The resistivity of the microplastic film on glass was measured by the four-point probe as 9.36105 -cm in the dark and 9.23105 -cm under illumination (100 mW/cm²). A p–n junction device with In-Ga/MP-derived p-Si/n-Si/Al configuration was successfully fabricated using a UV-assisted photoinduced diffusion method, which eliminates high-temperature processing and potential structural damage. The conductivity type of the MP-derived Si surface was investigated by hot-probe and Hall effect measurements, indicating the formation of p-type conductivity after the UV-assisted photoinduced diffusion process. The characteristic parameters of the device were determined from the current (I )– voltage (V) and capacitance (C)–voltage (V) measurements.. Dark I–V measurements showed that the samples illuminated for 30 and 60 min exhibited clear rectifying behavior characteristic of a p–n junction, whereas the control sample without UV illumination did not show rectification. In addition, capacitance–voltage (C–V) measurements revealed relatively high acceptor concentrations on the order of 1017 cm-3, which increased with prolonged UV illumination, suggesting enhanced boron incorporation into the Si surface.