Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.36, sa.33, 2025 (SCI-Expanded, Scopus)
Zinc telluride (ZnTe) thin films were successfully fabricated using the Quasi-Closed Volume (QCV) method, providing stoichiometric and uniform layers suitable for visible-light photodetector applications. XRD and SEM analyses confirmed a cubic ZnTe phase with densely packed grains, while optical studies revealed a direct bandgap of similar to 2.20 eV. Electrical measurements indicated p-type conductivity with a resistivity of 1.01 x 10(4) Omega cm and a hole mobility of 0.445 m(2) V-1 s(-1). The photodetector exhibited wavelength-dependent behavior, showing maximum sensitivity (465%), responsivity (0.59 mA/W), and detectivity (6.9 x 10(6) Jones) under blue light (443 nm). The response (26 ms) and recovery (13 ms) times confirm its rapid photoresponse. The sublinear photocurrent-power relationship (I proportional to P-0.62) indicates trap-controlled conduction dominated by native defects. These findings demonstrate that QCV-grown ZnTe thin films possess stable and reproducible photoresponse characteristics, highlighting their potential for cost-effective, rapid-response visible-light photodetectors.