JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS, cilt.36, sa.2100, ss.1-13, 2025 (SCI-Expanded, Scopus)
Zinc
telluride (ZnTe) thin films were successfully fabricated using the Quasi-Closed
Volume (QCV) method, providing stoichiometric and uniform layers suitable for
visible-light photodetector applications. XRD and SEM analyses confirmed a
cubic ZnTe phase with densely packed grains, while optical studies revealed a
direct bandgap of ~2.20 eV. Electrical measurements indicated p-type
conductivity with a resistivity of 1.01×104 Ω·cm and a hole mobility
of 0.445 m2 V-1 s-1. The
photodetector exhibited wavelength-dependent behavior, showing maximum
sensitivity (465%), responsivity (0.59 mA/W), and detectivity (6.9×106
Jones) under blue light (443 nm). The response (26 ms) and recovery (13 ms)
times confirm its rapid photoresponse. The sublinear photocurrent–power
relationship (I ∝ P0.62)
indicates trap-controlled conduction dominated by native defects. These
findings demonstrate that QCV-grown ZnTe thin films possess stable and
reproducible photoresponse characteristics, highlighting their potential for cost-effective,
rapid-response visible-light
photodetectors.