Variable Gravity and Magnetic Field Effects on Photo-Thermoelastic Wave Propagation in an Optically Excited Fiber-Reinforced Semiconductor Half-Space
Mathematics, cilt.14, sa.14, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 14 Sayı: 14
- Basım Tarihi: 2026
- Doi Numarası: 10.3390/math14142635
- Dergi Adı: Mathematics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, zbMATH, Directory of Open Access Journals, Academic Search Ultimate (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Anahtar Kelimeler: carrier diffusion dynamics, fiber-reinforced anisotropic half-space, generalized heat transport, gravity-dependent thermoelastic waves, magneto-photo-thermoelastic coupling, normal mode analysis, optical excitation in semiconductors
- Recep Tayyip Erdoğan Üniversitesi Adresli: Evet
Özet
This paper presents a two-dimensional magneto-photo-thermoelastic model for a fiber-reinforced anisotropic semiconductor half-space subjected to optical excitation and a variable gravity field. The formulation is developed within the framework of generalized photo-thermoelasticity by considering the coupled interactions among thermal, elastic, carrier-density, electromagnetic, and gravity-induced effects. The constitutive equations of a fiber-reinforced anisotropic medium are employed, while the influences of the magnetic field and gravity are incorporated into the governing equations. A suitable nondimensionalization procedure is introduced, and the resulting coupled system is solved analytically using the normal mode technique and eigenvalue approach. Numerical results are obtained for the temperature, carrier density, displacement components, and stress distributions. The influence of the gravity parameter on the physical fields is investigated in detail. The results indicate that gravity significantly affects the mechanical and stress responses, whereas its effect on the thermal and carrier-density fields is comparatively less pronounced. A comparative study between silicon and germanium semiconductors is also carried out, revealing noticeable differences in the amplitudes and attenuation behavior of the coupled fields due to variations in material properties. The present study provides useful insights into coupled multiphysical interactions in semiconductor structures and may be relevant to applications in optoelectronic devices, photonic systems, smart composite materials, and aerospace technologies.