The effect of external electric field on mass attenuation coefficients of some semiconductor


ŞAHİN M. , YAVUZ S. S.

RADIATION EFFECTS AND DEFECTS IN SOLIDS, vol.169, no.12, pp.1064-1069, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 169 Issue: 12
  • Publication Date: 2014
  • Doi Number: 10.1080/10420150.2014.988622
  • Title of Journal : RADIATION EFFECTS AND DEFECTS IN SOLIDS
  • Page Numbers: pp.1064-1069

Abstract

In this study, we measured the mass attenuation coefficient of n-type GaAs, p-type GaAs, n-type Si and Au/n-Si/n(+)Si/Al samples with and without external electric field. Samples were set in perpendicular direction to the 100 mCi Am-241 radioactive source and counts were made with a NaI(Tl) detector. It was observed that when an external electric field was applied onto the samples, mass attenuation coefficients were increased. Results showed that this study is consistent with previous studies.