Research Information System
RADIATION EFFECTS AND DEFECTS IN SOLIDS, vol.169, no.12, pp.1064-1069, 2014 (SCI-Expanded)
In this study, we measured the mass attenuation coefficient of n-type GaAs, p-type GaAs, n-type Si and Au/n-Si/n(+)Si/Al samples with and without external electric field. Samples were set in perpendicular direction to the 100 mCi Am-241 radioactive source and counts were made with a NaI(Tl) detector. It was observed that when an external electric field was applied onto the samples, mass attenuation coefficients were increased. Results showed that this study is consistent with previous studies.