GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

Durmaz H., Nothern D., Brummer G., Moustakas T. D., Paiella R.

Conference on Lasers and Electro-Optics (CLEO), San-Jose, Costa Rica, 14 - 19 May 2017 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1364/cleo_si.2017.sm4j.7
  • City: San-Jose
  • Country: Costa Rica
  • Recep Tayyip Erdoğan University Affiliated: No

Abstract

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.