GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics


Durmaz H., Nothern D., Brummer G., Moustakas T. D. , Paiella R.

Conference on Lasers and Electro-Optics (CLEO), San-Jose, Kostarika, 14 - 19 Mayıs 2017 identifier identifier

Özet

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.