Thermally stimulated currents in layered semiconductor Tl4In3GaS8

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Gasanly N. M., Özkan H., Mogaddam N. A. P.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.21, no.9, pp.1250-1255, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 21 Issue: 9
  • Publication Date: 2006
  • Doi Number: 10.1088/0268-1242/21/9/007
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1250-1255
  • Recep Tayyip Erdoğan University Affiliated: No


We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found to be 5.4 x 10(-25) cm(2) and 3.3 x 10(14) cm(-3), respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 8 meV/decade for the trap distribution.