Improvement in electrical performance of half-metallic Fe3O 4/GaAs structures using pyrolyzed polymer film as buffer layer

Akin S., Özel F., Kuş M., Sönmezoǧlu S.

Philosophical Magazine, cilt.94, sa.23, ss.2678-2691, 2014 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 94 Sayı: 23
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1080/14786435.2014.927599
  • Dergi Adı: Philosophical Magazine
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2678-2691
  • Anahtar Kelimeler: half-metallic/insulator/semiconductor (h-MIS) structures, I-V measurements, pyrolyzed polymer film
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Hayır

Özet

In this work, the Fe3O4 magnetic nanoparticles (MNPs) were synthesized by a colloidal method. TEM images reveal that Fe 3O4 MNPs are spherical in shape with a narrow size distribution in the range of 6-7 nm. These MNPs were used in the fabrication of two types of n-GaAs-based structures: (i) Fe3O4/n-GaAs (reference); and (ii) Fe3O4/PPF/n-GaAs. We present that carbon-based pyrolyzed polymer films (PPFs), as a buffer layer, can control the electrical characteristics of a conventional Fe3O4/n-GaAs device. The behaviour of the apparent barrier height and ideality factor with the interfacial layer due to the presence of the interface state density is discussed. PPF raises the barrier height in a Fe3O 4/PPF/n-GaAs half-metallic/insulator/semiconductor (h-MIS) device as high as 0.62 0.002 eV. Furthermore, Fe3O4/PPF interfaces exhibit unique electronic properties including high-quality interface, low series resistance (from 17.73 kω to 85.66 ω) and extremely low interface state density (1.76 × 1012 eV-1 cm -2). Compared to the electrical performance for the Fe 3O4/n-GaAs junction, that for the Fe3O 4/PPF/n-GaAs junction was enhanced. © 2014 Taylor & Francis.