Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

Gul F., EFEOĞLU H.

SUPERLATTICES AND MICROSTRUCTURES, vol.101, pp.172-179, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 101
  • Publication Date: 2017
  • Doi Number: 10.1016/j.spmi.2016.11.043
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.172-179
  • Keywords: Memristor, Zinc oxide, Bipolar resistive switching, Schottky emission, Oxygen vacancies, MEMORY
  • Recep Tayyip Erdoğan University Affiliated: No

Abstract

In this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO. (C) 2016 Elsevier Ltd. All rights reserved.