Determination of the local structure of CsBi4-xPbxTe6 (x=0, 0.5) by X-ray absorption spectroscopy


Wakita T., PARIS E., MIZOKAWA T., Hacisalihoglu M. Y. , Terashima K., OKAZAKI H., ...Daha Fazla

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, cilt.18, ss.25136-25142, 2016 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Cilt numarası: 18 Konu: 36
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1039/c6cp04949d
  • Dergi Adı: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • Sayfa Sayıları: ss.25136-25142

Özet

We have studied the local structure and valence electronic unoccupied states of thermoelectric CsBi4Te6 and superconducting CsBi3.5Pb0.5Te6 (T-c similar to 3 K) by extended X-ray absorption fine structure (EXAFS) and X-ray absorption near edge structure (XANES) measurements. The Bi-L-3 edge EXAFS reveals wide Bi-Te distance distribution for both compounds indicating complex atomic arrangements in the studied system. The mean square relative displacements (MSRDs) of the Bi-Te bond distances appear largely increased in Pb substituted system due to larger overall local disorder, however, one of the Bi-Te bonds shows a reduced disorder. On the other hand, the Bi-L-3 edge XANES is hardly affected by Pb substitution while the Te-L-1 edge XANES reveals increased density of unoccupied Te 5p states. This suggests that the carriers introduced by the Pb substitution in CsBi4-xPbxTe6 preferentially goes on Te sites. Similarly, the Cs-L-3 edge XANES also shows small changes due to Pb-substitution and reduced local disorder indicated by the reduced width of the Cs-L3 edge white line. We have also shown that the X-ray photoemission spectroscopy (XPS) measurements on various electronic core levels are in a qualitative agreement with the XANES results. These findings are consistent with carrier doping and a reduced disorder in one direction to be likely factors to drive the thermoelectric CsBi4Te6 into a bulk superconductor by Pb-substitution in CsBi4-xPbxTe6.