Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature


THIN SOLID FILMS, vol.520, no.7, pp.2532-2536, 2012 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 520 Issue: 7
  • Publication Date: 2012
  • Doi Number: 10.1016/j.tsf.2011.10.160
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.2532-2536


CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T-S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K. (C) 2011 Elsevier B.V. All rights reserved.