Optical and electrical properties of SiC/p-Si heterojunction
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.37, no.17, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 37 Issue: 17
- Publication Date: 2026
- Doi Number: 10.1007/s10854-026-17754-3
- Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Open Archive Collection: AVESIS Open Access Collection
- Recep Tayyip Erdoğan University Affiliated: Yes
Abstract
In this study, SiC was used to manufacture Al/SiC/p-Si/Al heterojunction structure by thermal evaporation method. X-ray diffractometry (XRD) and field emission scanning electron microscope (FE-SEM) analyses were evaluated for the characterization of semiconductor SiC layers. For the electrical characterization of the heterojunction, current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) parameters were measured at room temperature (RT) and under various illumination conditions. Ideality factor (n) and barrier height (& Fcy;b) values were calculated as 1.32 and 0.85 eV in the dark and 1.22 and 0.77 eV at 100 mW/cm2 illumination at RT, respectively. The results provide information indicating that Al/SiC/p-Si/Al heterojunction structure is promising for photovoltaic devices.