Akademik Veri Yönetim Sistemi
Micro and Nanostructures, cilt.214, 2026 (SCI-Expanded, Scopus)
We present a theoretical study of the electronic structure and intersubband optical properties of a single wurtzite ByInxGa1−x−yN/GaN quantum well grown along the polar c-direction under polarization-engineered conditions. Indium and boron compositions are selected to minimize polarization discontinuity at the well–barrier interface, leading to an approximately flat confinement potential. Spontaneous and piezoelectric polarization, as well as doping effects, are included through a self-consistent solution of the coupled Schrödinger–Poisson equations using the finite-difference method. Linear and third-order nonlinear intersubband absorption coefficients are calculated using the compact density matrix approach. Depolarization and excitonic effects on transition energies are also examined. The optical response is analyzed as a function of well width and alloy composition. The calculated absorption energies span a broad spectral range from approximately 110 to 780 meV (25–185 THz), demonstrating the potential of polarization-engineered BInGaN/GaN quantum wells for tunable intersubband and nonlinear optical applications.