Hybrid semiconductor based on CuO/CuO/CIGS: analysis of photovoltaic properties
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, vol.119, no.1, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 119 Issue: 1
- Publication Date: 2026
- Doi Number: 10.1007/s10971-026-07213-0
- Journal Name: JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Recep Tayyip Erdoğan University Affiliated: Yes
Abstract
This study presents a comprehensive analysis of various hybrid solar cell structures based on copper oxide (CuO, Cu2O) and copper indium gallium selenide (CIGS) configurations. Three different architectures CuO/CIGS, Cu2O/CIGS, and CuO/Cu2O/CIGS were simulated using the solar cell capacitance simulator (SCAPS-1D) to investigate their optoelectronic properties and performance parameters. The influence of key factors including the CIGS absorber layer thickness (0.5-3.0 & micro;m), acceptor density (10 & sup1;(5)-10 & sup1;(7) cm(-)& sup3;), and defect density (10 & sup1;& sup3;-10 & sup1;(5) cm(-)& sup3;) was systematically analyzed. Energy band diagrams were constructed to elucidate the charge carrier transport mechanisms at the heterojunction interfaces. The results demonstrate that the CuO/Cu2O/CIGS structure exhibits superior performance with a power conversion efficiency of up to 24.2% at optimized parameters, compared to 21.8% for Cu2O/CIGS and 24.2% for CuO/CIGS configurations. The enhanced performance is attributed to the favorable band alignment and reduced interface recombination in the triple-layer structure. This work provides valuable insights for designing high-efficiency thin-film solar cells and establishes optimal parameters for future experimental fabrication of copper oxide-CIGS hybrid photovoltaic devices.