First-principles study of coupled effect of ripplocations and S-vacancies in MoS2

Tritsaris G. A., Sensoy M. G., Shirodkar S. N., Kaxiras E.

JOURNAL OF APPLIED PHYSICS, vol.126, no.8, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 8
  • Publication Date: 2019
  • Doi Number: 10.1063/1.5099496
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Recep Tayyip Erdoğan University Affiliated: Yes


Recent experiments have revealed ripplocations, atomic-scale ripplelike defects on samples of MoS2 flakes. We use quantum mechanical calculations based on density functional theory to study the effect of ripplocations on the structural and electronic properties of single-layer MoS2, and, in particular, the coupling between these extended defects and the most common defects in this material, S-vacancies. We find that the formation of neutral S-vacancies is energetically more favorable in the ripplocation. In addition, we demonstrate that ripplocations alone do not introduce electronic states into the intrinsic bandgap, in contrast to S-vacancies. We study the dependence of the induced gap states on the position of the defects in the ripplocation, which has implications for the experimental characterization of MoS2 flakes and the engineering of quantum emitters in this material. Our specific findings collectively aim to provide insights into the electronic structure of experimentally relevant defects in MoS2 and to establish structure-property relationships for the design of MoS2-based quantum devices. Published under license by AIP Publishing.