Resonant tunneling properties of inverted Morse double quantum barrier


Bati M.

CHINESE JOURNAL OF PHYSICS, vol.56, no.2, pp.593-597, 2018 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 56 Issue: 2
  • Publication Date: 2018
  • Doi Number: 10.1016/j.cjph.2018.01.013
  • Title of Journal : CHINESE JOURNAL OF PHYSICS
  • Page Numbers: pp.593-597

Abstract

We study resonant tunneling characteristics of inverted Morse double quantum barrier structures. The effect of electric bias and structure parameters is calculated by using non-equilibrium Green's function method. Results for the transmission coefficients are compared with the structure parameters. Our results show that the widths of the wells and heights of barriers have a significant effect on the transmission properties. We found that the resonant peak of the transmission coefficient decreases with increasing electric field bias. Moreover, resonant energy level increases with increasing barrier height and increasing width parameters.

We study resonant tunneling characteristics of inverted Morse double quantum barrier structures. The effect of electric bias and structure parameters is calculated by using non-equilibrium Green's function method. Results for the transmission coefficients are compared with the structure parameters. Our results show that the widths of the wells and heights of barriers have a significant effect on the transmission properties. We found that the resonant peak of the transmission coefficient decreases with increasing electric field bias. Moreover, resonant energy level increases with increasing barrier height and increasing width parameters.