Stacking Domains and Dislocation Networks in Marginally Twisted Bilayers of Transition Metal Dichalcogenides

Enaldiev V. V., Zolyomi V., Yelgel C., Magorrian S. J., Fal'ko V. I.

PHYSICAL REVIEW LETTERS, vol.124, no.20, 2020 (SCI-Expanded) identifier identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 124 Issue: 20
  • Publication Date: 2020
  • Doi Number: 10.1103/physrevlett.124.206101
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Compendex, EMBASE, INSPEC, MEDLINE, zbMATH, DIALNET
  • Recep Tayyip Erdoğan University Affiliated: Yes


We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop density functional theory parametrized interpolation formulae for interlayer adhesion energies of MoSe2, WSe2, MoS2, and WS2, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles theta degrees < theta degrees(P) similar to 2.5 degrees and theta degrees < theta degrees(AP) similar to 1 degrees for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P and AP bilayers.