TURKISH JOURNAL OF PHYSICS, vol.44, no.5, pp.442-449, 2020 (ESCI)
Energy is undoubtedly one of our most important demands whose consumption is constantly increasing and will continue to increase soon. One of the most important factors in attaining the required energy is to provide high efficiency at a low cost with the help of new technological improvements by evaluating wastes. Energy demand could be achieved for a relatively large thermoelectric power value by recycling the Peltier modules from waste ones and adjusting their properties with nanotechnology. For this aim, thermoelectric thin film modules were grown on silicon (Si), glass, and Kapton substrates with thermal evaporation method by using two different BiTeSb/BiTeSe alloy materials which are placed in industrial Peltiers as the p- and n-type semiconductor. The thin films structural and morphological characterizations were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) experiments reveal fine surface with uniformly distributed continuous structure. Seebeck coefficiency (vertical bar S vertical bar) of the substantial modules were investigated by forming certain temperature gradients on them making serial connections using a homemade measurement setup. vertical bar S vertical bar = 143.86 mu V/K is obtained for the thermoelectric module on Si substrate and 44.96 mu V/K and 24.98 mu V/K are calculated for glass and Kapton, respectively.