The metal oxide semiconductor field effect transistor (MOSFET) drivers are among the main components for most power electronic applications. Increasing the switching frequency from kHz to MHz levels, MOSFETs' current, power and efficiency expectations are increasing. So it needs to find new solutions to design fast drivers. Some of the outcomes and new applications are now silicon carbide MOSFET applications. The focus of this paper is the power MOSFET gate drive requirements in various switch-mode power conversion applications. So a detailed literature review about MOSFET drivers investigates in this study firstly. There are several different MOSFET structures, but the authors focused on the planar-gate counterparts. Primary system and the switching principle of MOSFET's given in this study. The MOSFET gate driver design principles are presented in more detail in this study. Different proposals and applications for power converters are provided with examples. The drivers evaluated and concluded in all ways.