Substrate temperature–engineered Sb₂Se₃ layers toward enhanced photodetector performance


Yılmaz S., Olğar M. A., Bayazıt T., Küçükömeroğlu T., Bacaksız E.

SENSORS AND ACTUATORS, A: PHYSICAL, cilt.409, sa.118072, ss.1-10, 2026 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 409 Sayı: 118072
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1016/j.sna.2026.118072
  • Dergi Adı: SENSORS AND ACTUATORS, A: PHYSICAL
  • Derginin Tarandığı İndeksler: Scopus, Science Citation Index Expanded (SCI-EXPANDED), Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Sayfa Sayıları: ss.1-10
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Evet

Özet

Sb₂Se₃ thin films were deposited on soda-lime glass substrates using a single-step thermal evaporation method at substrate temperatures between 150 C and 300 ◦ C in order to systematically investigate the relationship between growth conditions and photodetector performance. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase orthorhombic Sb₂Se₃ structure for all samples, while the preferred orientation was observed to evolve from (230) to (221) with increasing substrate temperature. Scanning electron microscopy (SEM) results revealed a gradual morphological transformation from nanorod-like structures to more compact granular features, accompanied by a notable reduction in film thickness, likely associated with selenium re- evaporation at elevated temperatures. Photoluminescence (PL) spectra exhibited two broad emission bands located at 1.77–1.55 eV and 1.38–1.18 eV, which are attributed to defect-related transitions and near-band-edge recombination, respectively. The film deposited at 200 ◦ C showed comparatively higher PL intensity, suggesting relatively improved radiative recombination characteristics. The photodetector fabricated at 300 ◦ C demonstrated a responsivity (R) of 9 × 10⁻⁴ A/W, a detectivity (D*) of 2.5 × 10⁹ Jones, and an external quantum efficiency (EQE) of 0.257% under 443 nm illumination, together with fast response characteristics (rise time of 12 ms and fall time of 22 ms). The comparatively improved device performance observed at higher substrate temperature is associated with enhanced grain connectivity and relatively efficient charge transport, as supported by morphological and electrical analyses. In addition, long-term storage measurements indicated that the device maintained a measurable photoresponse after three months of exposure to ambient conditions, although variations in photocurrent behavior were observed. These findings suggest that substrate temperature plays a critical role in balancing crystallinity, defect formation, and charge transport properties, and that thermally evaporated Sb₂Se₃ thin films can be considered as promising candidates for low-cost photodetector applications.