A metal-oxide-semiconductor (MOS)-based circuit model that emulates a TiO2 memristor is proposed in this study. First, a TiO2 (10-nm active layer thickness)based memristor device was fabricated. The structural properties of the device were confirmed via energy dispersive X-ray spectroscopy. The memristive characteristics of the device were resolved by applying a time-dependent voltage. The typical pinched hysteresis memristive loops of the current-voltage curves were obtained. After physical implementation and characterization of the device, a circuit model was implemented using only four MOS transistors to emulate the fabricated TiO2 memristor. In addition to emulating the fabricated memristor, the proposed circuit model is suitable for use in general memristor-based applications. No active element or circuit blocks were used in the circuit to achieve memristive characteristics. The simulation and experimental results are in good agreement; moreover, the circuit is very simple compared to those presented in previous studies in the literature and it was able to emulate the fabricated memristor. All simulations were completed using 180 nm TSMC CMOS process parameters.