Terahertz intersubband photodetectors based on semi- polar GaN/AlGaN heterostructures

Durmaz H. , Nothern D., Brummer G., Moustakas T. D. , Paiella R.

APPLIED PHYSICS LETTERS, cilt.108, sa.20, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 108 Konu: 20
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1063/1.4950852


Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a free-standing semi-polar (20 (2) over bar(1) over bar) GaN substrate. These quantum wells are nearly free of the polarization-induced internal electric fields that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz photodetector design can be implemented. Pronounced photocurrent peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics. Published by AIP Publishing.