Comparative analysis of chloride-treated ZnTe films in photodetector devices

Yılmaz S., Başol B. M., Olğar M. A., Bayazıt T., Küçükömeroğlu T., Bacaksız E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.198, ss.1369-1374, 2025 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 198
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.mssp.2025.109733
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Sayfa Sayıları: ss.1369-1374
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Evet

Özet

The current work aims to demonstrate the potential effects of different Cl-treatments on ZnTe thin films as candidates for photodetector applications. X-ray diffraction (XRD) data revealed that the degree of preferred orientation along the (111) plane increased with Cl-treatments compared to the as-deposited ZnTe, and Cl-treatment also promoted crystal growth in ZnTe. Surface images showed that the MgCl2-treated ZnTe sample exhibited a transformation of faceted grains into rounded shapes, resulting in a denser and more compact microstructure. Among the samples, the CdCl2-treated ZnTe demonstrated a sharper transition. The optical band gaps were 2.18 eV for the as-deposited ZnTe film, 2.16 eV for the ZnCl2-treated sample, 2.20 eV for the CdCl2-treated sample, and 2.19 eV for the MgCl2-treated sample. This indicates that ZnCl2 treatment slightly lowers the band gap, whereas CdCl2 and MgCl2 treatments lead to small increases. The current-voltage (I-V) curves displayed a steeper slope under both dark and illuminated conditions after ZnCl2, MgCl2, and CdCl2 treatments compared to the as-deposited ZnTe, likely due to enhanced conductivity. The CdCl2-treated ZnTe photodetectors (PDs) exhibited the fastest photoresponse, with rise and fall times of 13 m s each. Furthermore, CdCl2-treated ZnTe-based PDs achieved the highest sensitivity (S = 417 %), responsivity (R = 0.0024 A/W), and detectivity (D∗ = 1.4 × 107 Jones) among the tested devices, suggesting that these PDs are suitable candidates for high-performance photodetector applications.