Theoretical study of thermoelectric properties of p-type Mg-2 Si1-chi Sn-chi solid solutions doped with Ga


Yelgel O. C.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.691, pp.151-158, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 691
  • Publication Date: 2017
  • Doi Number: 10.1016/j.jallcom.2016.08.278
  • Title of Journal : JOURNAL OF ALLOYS AND COMPOUNDS
  • Page Numbers: pp.151-158
  • Keywords: Thermoelectric materials, Thermoelectric figure of merit, Electrical transport properties, Thermal transport properties, Mg2SiSn systems, VALENCE-BAND CONVERGENCE, THERMAL-CONDUCTIVITY, PERFORMANCE, FIGURE, BI, MERIT, PBTE, GE

Abstract

Mg-2 Si-Mg-2 Sn solid solutions are a promising class of thermoelectric materials. The thermoelectric properties of p-type Mg-2(Si-0.3 Sn-0.7)(1-y) Gay solid solutions with the doping levels as y = 0.05 and y = 0.07 are investigated in the temperature range of 300 K-800 K. By using the nearly-free hole approximation and the Fermi-Dirac statistics, the temperature dependences of Fermi level (E-f), Seebeck coefficient (S), and electrical conductivity (sigma) are calculated theoretically and compared with related experimental measurements. The thermal conductivity contributions from carriers (namely acceptor holes in this present work, k(c)), electron-hole pairs (k(bp)), and phonons (k(ph)) are included by employing Wiedemann-Franz law, Price's theory, and Srivastava's scheme, respectively. A maximum thermoelectric figure of merit (ZT) of 0.355 is theoretically achieved for the Mg-2(Si-0.3 Sn-0.7)(0.95) Ga-0.05 sample arising from a high Seebeck coefficient of 175.71 mu V/K and low total thermal conductivity of 1.82 W m(-1) K-1 at 650 K where its experimental ZT value was reported as 0.356 at 620 K. (C) 2016 Elsevier B.V. All rights reserved.