Akademik Veri Yönetim Sistemi
INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER, cilt.172, 2026 (SCI-Expanded, Scopus)
This study addresses a key gap in modeling coupled photo-thermoelastic wave propagation in semiconductor materials by introducing an advanced theoretical framework that incorporates nonlocal thermal effects, rotational dynamics, and magneto-thermoelastic coupling, factors often overlooked in classical and generalized thermoelastic theories. Specifically, it proposes a novel nonlocal photo-thermoelastic model that integrates the Moore-Gibson-Thompson (MGT) heat equation with a Guyer-Krumhansl-type extension of Green-Naghdi Type III (GN-III) heat conduction to investigate wave propagation in a rotating semiconductor half-space subjected to a uniform magnetic field and photothermal excitation. The framework introduces a nonlocal thermal length-scale parameter to capture microstructural interactions and ensures finite thermal wave speeds, addressing critical limitations of classical and generalized thermoelastic theories. The governing equations, accounting for Coriolis and centrifugal forces, Lorentz-force coupling, and carrier diffusion dynamics, are solved analytically using the normal mode method. Numerical simulations for silicon reveal that nonlocality reduces peak normal stress by over 70 % and enhances thermal penetration depth by more than sixfold. Rotation induces phase reversal in displacement and amplifies subsurface carrier density by up to 75 times, while the magnetic field modulates shear stress by over 200 % and enables active control of wave attenuation. Furthermore, the model accurately captures the delayed carrier response due to finite recombination times. These quantified enhancements demonstrate that the proposed framework provides a more physically realistic and predictive tool for designing high-performance semiconductor devices in extreme multi-physics environments, such as space-grade photovoltaics, MEMS gyroscopes, and magneto-optoelectronic systems.