III-Nitride Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

Paiella R., Durmaz H., Sudradjat F. F., Nothern D., Brummer G. C., Zhang W., ...More

Conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Applications, California, United States Of America, 9 - 10 August 2017, vol.10353 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 10353
  • Doi Number: 10.1117/12.2274040
  • City: California
  • Country: United States Of America
  • Recep Tayyip Erdoğan University Affiliated: No


We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semi-polar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.