III-Nitride Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics


Paiella R., Durmaz H., Sudradjat F. F. , Nothern D., Brummer G. C. , Zhang W., ...More

Conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Applications, California, United States Of America, 9 - 10 August 2017, vol.10353 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 10353
  • Doi Number: 10.1117/12.2274040
  • City: California
  • Country: United States Of America

Abstract

We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semi-polar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.