III-Nitride Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

Paiella R., Durmaz H., Sudradjat F. F., Nothern D., Brummer G. C., Zhang W., ...Daha Fazla

Conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Applications, California, Amerika Birleşik Devletleri, 9 - 10 Ağustos 2017, cilt.10353, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 10353
  • Doi Numarası: 10.1117/12.2274040
  • Basıldığı Şehir: California
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Hayır

Özet

We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semi-polar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.