A novel OTA-based circuit model corroborated by an experimental semiconductor memristor
MICROELECTRONIC ENGINEERING, cilt.194, ss.56-60, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 194
- Basım Tarihi: 2018
- Doi Numarası: 10.1016/j.mee.2018.03.012
- Dergi Adı: MICROELECTRONIC ENGINEERING
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.56-60
- Anahtar Kelimeler: Memristor, Zinc oxide, OTA, Memristor emulator, EMULATOR, ZNO, TRANSITION
- Recep Tayyip Erdoğan Üniversitesi Adresli: Hayır
Özet
A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current-voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.