A novel OTA-based circuit model corroborated by an experimental semiconductor memristor

Gul F., BABACAN Y.

MICROELECTRONIC ENGINEERING, vol.194, pp.56-60, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 194
  • Publication Date: 2018
  • Doi Number: 10.1016/j.mee.2018.03.012
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.56-60
  • Keywords: Memristor, Zinc oxide, OTA, Memristor emulator, EMULATOR, ZNO, TRANSITION
  • Recep Tayyip Erdoğan University Affiliated: No

Abstract

A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current-voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.