The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli

Bilal Taşyürek L., Sarılmaz A., Rüşen A., Yiğit E., Özel F., Orak İ.

Materials Science and Engineering: B, cilt.287, 2023 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 287
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.mseb.2022.116139
  • Dergi Adı: Materials Science and Engineering: B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Chevrel phase, Electrical characterization, Mn2Mo6S8, Photodiodes
  • Recep Tayyip Erdoğan Üniversitesi Adresli: Hayır

Özet

Mn2Mo6S8 material was synthesized by solid state synthesis method and coated on p-Si by thermal evaporation method to produce Au/Mn2Mo6S8/p-Si photodiode. Morphological characterization was performed by taking XRD and EDX analyzes and SEM images, and the crystal structure of the material was seen. Electrical characterization was performed by various methods (TE, Cheung and Norde functions) by taking temperature-dependent I-V measurements between 100 and 340 K under dark condition. The I-V measurements were made in various illuminations at room temperature and the photo response of the device was examined. The devices capacitor properties were calculated by making C-V measurements at various frequencies. The results showed that the I-V characteristic of the Au/Mn2Mo6S8/p-Si device were strongly dependent on temperature and the C-V characteristic was strongly frequency dependent. The results revealed that it is a suitable candidate material for optoelectronic devices.