We have carried out thermally stimulated current measurements on as-grown Tl2InGaS4-layered single crystals in the low temperature range 10-60 K with different heating rates. We found experimental evidence for the presence of two shallow hole trapping centers with activation energies of 4 and 10 meV. We have determined the trap parameters using various methods of analysis, and these agree with each other. Their capture cross-sections have been found to be 6.5 x 10(-26) and 4.0 x 10(-25) cm(2), respectively, and their concentrations are 2.1 x 10(12) and 6.5 x 10(12) cm(-3), respectively. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (c) 2005 Elsevier B.V. All rights reserved.