Tunable electronic properties of van der Waals heterostructures composed of stanene adsorbed on two-dimensional, graphene-like nitrides

Yelgel C.

JOURNAL OF APPLIED PHYSICS, vol.125, no.15, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 125 Issue: 15
  • Publication Date: 2019
  • Doi Number: 10.1063/1.5096160
  • Journal Name: JOURNAL OF APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Recep Tayyip Erdoğan University Affiliated: Yes

Abstract

We investigated the structural stability and electronic properties of stanene/graphene-like nitride (stanene/XN, X = Al, B, and Ga) heterostructures using first-principles calculations. The results reveal that stanene interacts with BN (GaN) via van der Waals interactions with a binding energy of 93 meV (171 meV) per Sn atom. In contrast, the stanene/AlN heterostructure shows a strong inter-layer coupling, with a binding energy of 315 meV per Sn atom. The electronic structure of stanene/GaN shows a direct bandgap of 213 meV at the Dirac point. The stanene/AlN and stanene/GaN heterostructures have Schottky barriers of 1.383 and 1.243 eV, respectively, with p-type Schottky contacts. In addition, an n-type Schottky contact is formed in the stanene/BN heterostructure with a Schottky barrier of 2.812 eV. The results suggest that the studied heterostructures are potential candidates for stanene-based nanoelectronic applications. Published under license by AIP Publishing.