Akademik Veri Yönetim Sistemi
International Communications in Heat and Mass Transfer, cilt.178, 2026 (SCI-Expanded, Scopus)
Classical models that describe semiconductor behavior often fall short in capturing the intricate interactions that occur at micro and nano scales, such as thermal memory, long-range atomic interactions, and electromagnetic effects. To tackle this challenge, this study introduces a comprehensive theoretical framework framework that integrates five essential phenomena: photo-thermoelasticity, nonlocal elasticity, microstretch deformation, Hall current effects, and the dual phase lag (DPL) thermoelastic model. The research focuses on a semiconductor half-space exposed to a strong magnetic field and pulsed laser stimulation, with the governing coupled partial differential equations being solved analytically through Laplace and Fourier transform methods. The central feature of this work is the simultaneous integration of microstructural features (microstretch) along with nonlocal spatial interactions and Hall current influences into a cohesive two-dimensional model. This methodology produces solutions for key parameters such as temperature, carrier density, displacement, and stress fields, which are then numerically assessed for silicon. The findings indicate that Hall current considerably alters carrier dynamics and wave coupling, which results in a notable increase in wave attenuation. Additionally, a rise in nonlocal parameters tends to suppress high-frequency oscillations, acting as a stabilizing force that smooths out sharp field gradients. These discoveries hold design implications for real-world applications, enhancing predictive capabilities for the design of cutting-edge semiconductor devices like photothermal sensors, optoelectronic components, and MEMS/NEMS actuators that function under extreme thermal and electromagnetic conditions.