Akademik Veri Yönetim Sistemi
OPTICAL MATERIALS, cilt.175, sa.118057, ss.1-10, 2026 (SCI-Expanded, Scopus)
Cerium oxide (CeO2) thin films were fabricated by spin coating using precursor concentrations ranging from 0.05 M to 0.5 M. The optimal molarity was determined to be 0.05 M. This film showed a band gap of 3.36 eV, a resistivity of 411 Ω·cm and a carrier concentration of 2.24×1015 cm-3. Al and Ni dopants were added at 2%, 5% and 10%. Al doping reduced UV absorption and improved optical transparency. Ni doping increased oxygen vacancy concentration and further reduced optical absorption. The band gap increased to 3.48 eV with 2% Al doping and to 3.45 eV with 2% Ni doping. The bandgap decreased at higher doping levels, while the crystal size also decreased from 11.28 nm to 9.74 nm in Al doped films. In the Ni doped samples, the crystal size decreased from 11.28 nm to 5.42 nm at a 10% doping ratio compared to the undoped sample. FESEM analysis showed that Al doping made the films more porous film morphology. In contrast, Ni doping created a more uniform grain structure. In general, these results confirmed that Al and Ni dopants strongly influenced the optical, electrical and structural properties of CeO2 thin films.