Enhancing the power factor of p-type BiSbTe films via deposited with/without Cr seed layer


Yuzuak G. D. , Cicek M. M. , Elerman Y., YÜZÜAK E.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.886, 2021 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 886
  • Publication Date: 2021
  • Doi Number: 10.1016/j.jallcom.2021.161263
  • Title of Journal : JOURNAL OF ALLOYS AND COMPOUNDS
  • Keywords: Cr seed layer, BiSbTe, Kelvin probe force microscopy, Power factor, TELLURIDE THIN-FILMS, THERMOELECTRIC TRANSPORT-PROPERTIES, BISMUTH-TELLURIDE, THERMAL TRANSPORT, CRYSTAL-GROWTH, PERFORMANCE, BI0.5SB1.5TE3, SB2TE3, BI2TE3, OPTIMIZATION

Abstract

The thermoelectric effect is an efficient method to use waste heat as a primary source of electrical energy. Being a room temperature thermoelectric thin film, p-type BiSbTe is one of the best candidates owing to the combined high efficiency and large power factor for future technological applications. Novel approaches have emerged in recent decades with the aim of enhancing the thermoelectric properties of BiSbTe thin films. The method involves using Cr as an adhesion and seed layer for controlling microstructure and transport properties via the energy filtering of high-energy carriers. The heterostructure of Cr/BiSbTe film demonstrates the best electrical transport performance, where the Seebeck coefficient and the electrical conductivity are 425 mu V/K and 25 S/m* 10(3) in the vicinity of room temperature. The power factor of Cr/BiSbTe was reported to be 6.8 mW/mK(2) at 375 K, which was approximately seven times higher than the film without the Cr layer. We conclude that the inclusion of the Cr seed layer can notably improve the electrical transport properties of p-type BiSbTe films. (C) 2021 Elsevier B.V. All rights reserved.